| PART |
Description |
Maker |
| STF23NM60N STI23NM60N STW23NM60N STP23NM60N STB23N |
N-channel 600 V - 0.150 ヘ - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh⑩ Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh Power MOSFET
N-channel 600 V - 0.150 楼? - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh垄芒 Power MOSFET
|
http://
STMicroelectronics
|
| APT10035LFLLG APT10035B2FLL |
Power MOS 7is a new generation of low loss, high voltage, N-Channel
28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| STP8NM60N STF8NM60N STD8NM60N STD8NM60N-1 |
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh?/a> Power MOSFET
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh Power MOSFET
N-channel 600 V - 0.56 ヘ - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240
CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240
Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
| APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
| APT10021JFLL_04 APT10021JFLL APT10021JFLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
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